DocumentCode :
1225505
Title :
A 1.4 V Supply CMOS Fractional Bandgap Reference
Author :
Perry, Raymond T. ; Lewis, Stephen H. ; Brokaw, A. Paul ; Viswanathan, T.R.
Author_Institution :
Univ.of California, Davis
Volume :
42
Issue :
10
fYear :
2007
Firstpage :
2180
Lastpage :
2186
Abstract :
This paper describes a bandgap reference that outputs a fraction of the silicon bandgap voltage. To simplify the design of an internal operational amplifier, the reference drives the base voltages on substrate transistors through unity-gain buffers to a fraction of a diode drop. With a 1.4 V supply, the reference produces an output of about 858 mV, which varies by 1.28 mV from -20degC to 100degC. It dissipates 162 muW and occupies 1.2 mm2 in 0.35 mum CMOS.
Keywords :
CMOS integrated circuits; energy gap; reference circuits; CMOS fractional bandgap reference; diode drop; internal operational amplifier; power 162 muW; silicon bandgap voltage; size 0.35 mum; substrate transistors; temperature -20 degC to 100 degC; unity-gain buffers; voltage 1.28 mV; voltage 1.4 V; voltage 858 mV; Analog circuits; Analog integrated circuits; CMOS analog integrated circuits; CMOS technology; Diodes; Land surface temperature; Operational amplifiers; Photonic band gap; Silicon; Voltage; Analog circuits; CMOS analog integrated circuits; analog integrated circuits; reference circuits; temperature;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2007.905236
Filename :
4317710
Link To Document :
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