Enhanced mobility piezoelectric AlInAs/InGaAs quantum well structures on (111)B InP substrates [HEMTs]

Author

Hitchens, L.J. ; Houston, P.A. ; Hopkinson, M. ; Rees, G.J.

Author_Institution

Dept. of Electron. & Electr. Eng., Sheffield Univ., UK

Volume

31

Issue

25

fYear

1995

fDate

12/7/1995 12:00:00 AM

Firstpage

2215

Lastpage

2216

Abstract

Self-consistent Poisson/Schrodinger calculations were used for designing strained AlInAs/InGaAs modulation doped quantum wells which were then grown by molecular beam epitaxy on (111)B oriented InP substrates. Compressive-strained wells (65% In) and tensile-strained wells (47% In) gave 300 K mobilities of 12500 and 11250 cm² V ^-1 s^-1 at sheet concentrations of 3.8×10¹² cm^-2 and 3.3×10¹² cm^-2, respectively. These record values are attributed directly to the effects of the piezoelectric fields which positioned the electrons away from the influence of the well edges and the ionised impurities

Keywords

III-V semiconductors; Schrodinger equation; aluminium compounds; carrier mobility; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; piezoelectric semiconductors; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 300 K; AlInAs-InGaAs-InP; HEMTs; InP; carrier mobility; compressive-strained wells; ionised impurities; modulation doped quantum wells; molecular beam epitaxy; piezoelectric fields; self-consistent Poisson/Schrodinger calculations; tensile-strained wells; well edges;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19951493

Filename

481056