• DocumentCode
    1225544
  • Title

    Low temperature low pressure MOCVD AlxGa1-xAs layer grown as a dielectric for GaAs MIS devices

  • Author

    Dubuc, C. ; Beauvais, J. ; Aktik, ç

  • Author_Institution
    Centre de Recherche en Phys. du Solide, Sherbrooke Univ., Que., Canada
  • Volume
    31
  • Issue
    25
  • fYear
    1995
  • fDate
    12/7/1995 12:00:00 AM
  • Firstpage
    2219
  • Lastpage
    2220
  • Abstract
    An oxygen doped AlxGa1-xAs layer is demonstrated as a dielectric for GaAs MIS structures. This layer is MOCVD grown at 550°C with an operating pressure of 10 torr. By keeping the aluminium content low, it is possible to obtain a dielectric with relatively high resistivity and very good interface quality
  • Keywords
    III-V semiconductors; MISFET; aluminium compounds; chemical vapour deposition; dielectric thin films; gallium arsenide; semiconductor-insulator boundaries; 10 torr; 550 degC; GaAs-AlGaAs; MISFETs; interface quality; low pressure MOCVD; operating pressure; resistivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951513
  • Filename
    481059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1225544