DocumentCode :
1225650
Title :
A Current-Recycling Technique for Shadow-Match-Line Sensing in Content-Addressable Memories
Author :
Zhang, Jian-Wei ; Ye, Yi-Zheng ; Liu, Bin-Da
Author_Institution :
Microelectron. Center, Harbin Inst. of Technol., Harbin
Volume :
16
Issue :
6
fYear :
2008
fDate :
6/1/2008 12:00:00 AM
Firstpage :
677
Lastpage :
682
Abstract :
A current-recycling technique for shadow-match-line (SML) sensing in content-addressable memories (CAMs) is presented. In order to minimize energy-overhead, a novel current-recycling voltage detector (CRVD) is devised, whose working current is reused to charge up the match-line (ML) to determine matches or mismatches. Furthermore, with this CRVD, the word circuits realize fast-disable of the charging paths in case of mismatches. Since the majority of CAM words are mismatched, a significant power is reduced with a high search speed. Pre-layout simulation results show the proposed 256-word times 144-bit ternary CAM, based on a 0.13-mum 1.2-V CMOS process, achieves 0.51 fJ/bit/search for the word circuit with less than 900-ps search time. The achievement illustrates a 74.2% energy-delay-product (EDP) reduction as compared with the speed-optimized current-saving scheme. Post-layout simulation results of the word circuits show 0.65 fJ/bit/search energy per search with 1.2-ns search time.
Keywords :
CMOS digital integrated circuits; content-addressable storage; integrated circuit layout; integrated memory circuits; CAM; CMOS process; CRVD; EDP; content-addressable memories; current-recycling technique; current-recycling voltage detector; energy-delay-product reduction; prelayout simulation; shadow-match-line sensing; CADCAM; CMOS process; Cams; Circuit simulation; Computer aided manufacturing; Detectors; Energy consumption; Multilevel systems; Throughput; Voltage; Content-addressable memory (CAM); current- recycling; low power; shadow-match-line (SML) scheme;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2008.2000247
Filename :
4526715
Link To Document :
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