Title :
A Q-band monolithic linear amplifier using AlGaAs/GaAs HBT´s
Author :
Youngwoo Kwon ; Wu-Jing Ho ; Higgins, J.A.
Author_Institution :
Rockwell Sci. Center, Thousand Oaks, CA, USA
fDate :
4/1/1996 12:00:00 AM
Abstract :
The authors report on a Q-band monolithic heterojunction bipolar transistor (HBT) amplifier demonstrating high gain, efficiency, excellent linearity, and low added phase noise. The amplifier used 40 μm2 CB-HBTs in a balanced configuration. The monolithic microwave integrated circuit (MMIC) amplifier showed a peak gain of 13.5 dB at 38 GHz and a 3 dB bandwidth of 10 GHz. Under class-A bias conditions, the circuit exhibited P/sub 1 dB/ higher than 15 dBm from 35-41.5 GHz and a peak PAE of 32% at 35 GHz. Two-tone tests showed an IP3 of 30 dBm at 44 GHz and IMD3 ratios better than 20 dBc at 1-dB gain compression point. Amplifier phase noise measurement showed added phase noise of -148 dBc/Hz at 10 kHz away from the carrier at P1 /sub dB/. This circuit demonstrates a great potential for the HBT MMIC´s for MM-wave high-efficiency linear applications.
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; bipolar MIMIC; gallium arsenide; heterojunction bipolar transistors; integrated circuit noise; millimetre wave amplifiers; phase noise; wideband amplifiers; 10 GHz; 13.5 dB; 32 percent; 35 to 40 GHz; AlGaAs-GaAs; EHF; MM-wave high-efficiency linear applications; MMIC amplifier; Q-band; balanced configuration; class-A bias conditions; heterojunction bipolar transistor; monolithic HBT amplifier; monolithic microwave integrated circuit; phase noise; Gain; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Low-noise amplifiers; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Phase noise;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
