Title :
A Modified PseudoMOS Technique to Characterize Interface Quality of SOI Wafers
Author :
Höllt, Lothar ; Born, Mathias ; Schlosser, Martin ; Eisele, Ignaz ; Grabmeier, Josef ; Huber, Andreas
Author_Institution :
Inst. of Phys., Univ. of the German Fed. Armed Forces Munich, Neubiberg, Germany
Abstract :
We developed a new pseudoMOSFET technique by using an additional metallization, which directly contacts the Si-film to source and drain by Schottky contacts. In contrast to probe measurements, the drain current characteristics are independent of mechanical forces, and geometrical edge effects do not appear in electrical characteristics. We examined a variety of different contact metals in order to measure the mobility of electrons as well as holes. A theoretical explanation for the influence of the metal contacts on the electrical characteristics is presented.
Keywords :
MOSFET; Schottky barriers; carrier mobility; elemental semiconductors; semiconductor device metallisation; silicon; silicon-on-insulator; SOI wafers; Schottky contacts; Si-film; additional metallization; current characteristics; geometrical edge effects; interface quality; probe measurements; pseudoMOS technique; pseudoMOSFET technique; Charge carrier processes; Contacts; Current measurement; Electric variables; Electric variables measurement; Force measurement; Mechanical variables measurement; Metallization; Probes; Schottky barriers; Characterization; SOI; Schottky contacts; pseudoMOSFET ($!Psi$ -MOSFET);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.904013
