A Modified PseudoMOS Technique to Characterize Interface Quality of SOI Wafers

Author

Höllt, Lothar ; Born, Mathias ; Schlosser, Martin ; Eisele, Ignaz ; Grabmeier, Josef ; Huber, Andreas

Author_Institution

Inst. of Phys., Univ. of the German Fed. Armed Forces Munich, Neubiberg, Germany

Volume

54

Issue

10

fYear

2007

Firstpage

2685

Lastpage

2689

Abstract

We developed a new pseudoMOSFET technique by using an additional metallization, which directly contacts the Si-film to source and drain by Schottky contacts. In contrast to probe measurements, the drain current characteristics are independent of mechanical forces, and geometrical edge effects do not appear in electrical characteristics. We examined a variety of different contact metals in order to measure the mobility of electrons as well as holes. A theoretical explanation for the influence of the metal contacts on the electrical characteristics is presented.

Keywords

MOSFET; Schottky barriers; carrier mobility; elemental semiconductors; semiconductor device metallisation; silicon; silicon-on-insulator; SOI wafers; Schottky contacts; Si-film; additional metallization; current characteristics; geometrical edge effects; interface quality; probe measurements; pseudoMOS technique; pseudoMOSFET technique; Charge carrier processes; Contacts; Current measurement; Electric variables; Electric variables measurement; Force measurement; Mechanical variables measurement; Metallization; Probes; Schottky barriers; Characterization; SOI; Schottky contacts; pseudoMOSFET ($!Psi$ -MOSFET);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.904013

Filename

4317734