Title :
A 90% power-added-efficiency GaInP/GaAs HBT for L-band radar and mobile communication systems
Author :
Mallet, A. ; Floriot, D. ; Viaud, J.P. ; Blache, F. ; Nebus, J.M. ; Delage, S.
Author_Institution :
IRCOM, Limoges Univ., France
fDate :
3/1/1996 12:00:00 AM
Abstract :
A very high 90% power-added efficiency (PAE) with an output power (P/sub out/) of 200 mW and a power gain of 18 dB has been achieved at 1.8 GHz with a 240-μm2 GaInP/GaAs HBT (Thomson-CSF/LCR). The transistor (common emitter) was biased in class C mode (I/sub c/=0 mA; V/sub be/=1 V; V/sub ce/=7 V) and the load termination at the signal harmonics was optimized. First, a heterojunction bipolar transistor (HBT) nonlinear model has been extracted from pulsed I-V and pulsed S parameter measurements. A harmonic balance simulation was performed and suitable collector current/voltage waveforms were determined in order to optimize PAE. Second, a multiharmonic active load-pull system was used in order to measure and optimize the transistor efficiency. Measurement data were found to be in good agreement with simulated results. The main use of this HBT is expected to be in mobile communication systems and T/R modules for active array radars.
Keywords :
III-V semiconductors; S-parameters; UHF bipolar transistors; equivalent circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; land mobile radio; power bipolar transistors; radar equipment; semiconductor device models; 1.8 GHz; 18 dB; 200 mW; 90 percent; GaInP-GaAs; HBT nonlinear model; L-band radar; T/R modules; Thomson-CSF/LCR; UHF device; active array radars; class C mode; collector current/voltage waveforms; common emitter configuration; harmonic balance simulation; heterojunction bipolar transistor; mobile communication systems; multiharmonic active load-pull system; power gain; power-added-efficiency; pulsed I-V measurements; pulsed S parameter measurements; transistor efficiency; Data mining; Gain; Gallium arsenide; Heterojunction bipolar transistors; L-band; Power generation; Pulse measurements; Radar; Scattering parameters; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
