DocumentCode :
1225854
Title :
A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs
Author :
Severi, Simone ; Pantisano, Luigi ; Augendre, Emmanuel ; Andrés, Enrique San ; Eyben, Pierre ; De Meyer, Kristin
Author_Institution :
Interuniv. Microelectron. Center, Leuven
Volume :
54
Issue :
10
fYear :
2007
Firstpage :
2690
Lastpage :
2698
Abstract :
When comparing the extracted carrier mobility of long- and short-channel transistors, special consideration must be given to the metallurgical gate length (Lmet), neglecting the impact of source and drain junction profiles. Lmet can be identified with nanometer precision by using RF split-C-V measurements, and physical and electrical analysis can demonstrate the accuracy of the method. Another important parameter, the external transistor resistance (Rsd), can be identified with linear current measurements of short-channel devices. However, it is important to quantify the mobility dependence from the gate length in order to obtain an accurate result. A method to estimate the electrical field (Eeff) of short-channel devices is proposed. The extracted short-channel mobility shows a universal behavior identical to the classical long-channel one.
Keywords :
MOSFET; carrier mobility; semiconductor device reliability; RF split-C-V measurements; carrier mobility; electrical analysis; external transistor resistance; long-channel transistors; metallurgical gate length; mobility extraction; physical analysis; reliable metric; short-channel MOSFET; short-channel transistors; CMOS technology; Capacitance measurement; Current measurement; Electric resistance; Electric variables measurement; Electrical resistance measurement; Implants; MOSFETs; Radio frequency; Radiofrequency identification; Length and resistance measurements; MOSFET; scattering;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.904011
Filename :
4317749
Link To Document :
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