Title :
Large- and small-signal modulation properties of red (670 nm) VCSELs
Author :
Kuchta, Daniel M. ; Schneider, R.P. ; Choquette, K.D. ; Kilcoyne, S.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
3/1/1996 12:00:00 AM
Abstract :
The large- and small-signal properties of red GaInP-AlGaInP triple QW VCSELs (670 nm) were measured. For the fundamental mode the small signal bandwidth is 2 GHz. Large-signal modulation up to 1.5 Gb/s is achievable with a prebias. The turn-on delay of unbiased devices is found to saturate due to heating from the average of the data signal.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium compounds; indium compounds; laser cavity resonators; laser modes; laser transitions; optical saturation; quantum well lasers; surface emitting lasers; 1.5 Gbit/s; 2 GHz; GaInP-AlGaInP; GaInP-AlGaInP triple QW VCSELs; data signal; fundamental mode; large-signal modulation properties; optical saturation; red VCSELs; small signal bandwidth; small-signal modulation properties; turn-on delay; unbiased devices; Bandwidth; Distributed Bragg reflectors; Electrical resistance measurement; High speed optical techniques; Laboratories; Optical fiber devices; Optical modulation; Optical saturation; Stimulated emission; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
