High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

Author

Tappura, K. ; Aarik, J. ; Pessa, M.

Author_Institution

Nokia Res. Center, Tampere, Finland

Volume

8

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

319

Lastpage

321

Abstract

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow ridge structures were 300 A/cm/sup 2/ and 330 A/cm/sup 2/ for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87-89% and the internal losses of 7-10 cm/sup -1/ were obtained.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; laser cavity resonators; laser transitions; molecular beam epitaxial growth; optical losses; quantum well lasers; semiconductor growth; 680 nm; 87 to 89 percent; GaInP-AlGaInP; cavity length; continuous wave operation; differential quantum efficiency; high-power GaInP-AlGaInP quantum-well lasers; internal losses; internal quantum efficiency; pulsed operation; room temperature threshold current densities; shallow ridge structures; solid source molecular beam epitaxy; threshold current density; Epitaxial growth; Gas lasers; Molecular beam epitaxial growth; Optical materials; Physics; Pump lasers; Quantum well lasers; Solid lasers; Temperature; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.481103

Filename

481103