Gain, refractive index, and /spl alpha/-parameter in InGaAs-GaAs SQW broad-area lasers

Author

Bossert, David J. ; Gallant, David

Author_Institution

US Air Force Phillips Lab., Kirtland AFB, NM, USA

Volume

8

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

322

Lastpage

324

Abstract

Gain, refractive index, and the linewidth enhancement factor, or /spl alpha/-parameter, are measured in broad-area InGaAs-GaAs single-quantum-well semiconductor lasers using below-threshold amplified spontaneous emission spectra and a far-field filtering technique. The /spl alpha/ parameter is shown to increase dramatically with increasing carrier density and wavelength. Modes propagating in the transparent substrate of the lasers are shown to have a significant influence on the measured value of /spl alpha/.

Keywords

III-V semiconductors; carrier density; gallium arsenide; indium compounds; laser modes; quantum well lasers; refractive index; spectral line breadth; superradiance; /spl alpha/-parameter; InGaAs-GaAs; InGaAs-GaAs SQW broad-area lasers; below-threshold amplified spontaneous emission spectra; broad-area InGaAs-GaAs single-quantum-well semiconductor lasers; carrier density; far-field filtering technique; gain; linewidth enhancement factor; modes; refractive index; transparent substrate; wavelength; Charge carrier density; Filtering; Gain measurement; Laser modes; Optical propagation; Refractive index; Semiconductor lasers; Spontaneous emission; Substrates; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.481104

Filename

481104