Title :
Narrow-beam and power-penalty-free 1.3-μm laser diodes with monolithically integrated waveguide lens formed by selective-area epitaxial growth
Author :
Takemoto, A. ; Miyazaki, Y. ; Shibata, K. ; Matsumoto, K. ; Hisa, Y. ; Goto, K. ; Itagaki, T. ; Takiguchi, T. ; Omura, E. ; Ohtsubo, M.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
3/1/1996 12:00:00 AM
Abstract :
A narrow-beam has been realized in a 1.3 μm Fabry-Perot laser diode monolithically integrated with a tapered waveguide lens. The beam divergences in the perpendicular and horizontal directions are reduced down to 12/spl deg/ and 11/spl deg/ by a selective area epitaxial growth technique. The threshold current has been kept as low as 14 mA comparable to the conventional ones. Neither kinks in the L-I curves nor changes of far-field patterns are observed in the wide temperature range from -40 to 80/spl deg/C. Furthermore, high cut-off frequency over 4 GHz and power penalty-free characteristic under 622 Mb/s-50 km transmission have been confirmed.
Keywords :
Fabry-Perot resonators; integrated optics; laser beams; laser transitions; lenses; optical transmitters; optical waveguide components; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; -40 to 80 degC; 1.3 mum; 4 GHz; 50 km; 622 Mbit/s; Fabry-Perot laser diode; InP-InGaAsP; L-I curves; MOCVD; beam divergences; far-field patterns; high cut-off frequency; horizontal directions; kinks; monolithic integration; monolithically integrated waveguide lens; narrow-beam; perpendicular directions; power penalty-free characteristic; power-penalty-free 1.3-/spl mu/m laser diodes; selective-area epitaxial growth; tapered waveguide lens; threshold current; wide temperature range; Diode lasers; Epitaxial growth; Etching; Laser beams; Lenses; MOCVD; Optical waveguides; Temperature distribution; Thickness control; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
