Monte Carlo simulation of gamma ray spectra from semiconductor detectors

Monte Carlo techniques have been used to simulate gamma-ray pulse-height spectra from rectangularly shaped CdTe detectors in the energy range of a few keV to approximately 1 MeV. The simulation results were found to agree well with measured CdTe gamma-ray pulse-height spectra. The various physical events occurring within the detector are simulated in a naturally sequential manner. Specifically, the algorithm simulates such effects as exponentially absorbed radiation, multiple Compton scattering within the detector, charge-carrier trapping, and electronic noise (Gaussian). Advantages of this simulation method are the compactness of the code (allowing the use of microcomputers) and speed of operation (approximately 15 events per second)