Title :
A Bulk FinFET Unified-RAM (URAM) Cell for Multifunctioning NVM and Capacitorless 1T-DRAM
Author :
Han, Jin-Woo ; Ryu, Seong-Wan ; Kim, Sungho ; Kim, Chung-Jin ; Ahn, Jae-Hyuk ; Choi, Sung-Jin ; Kim, Jin Soo ; Kim, Kwang Hee ; Lee, Gi Sung ; Oh, Jae Sub ; Song, Myeong Ho ; Park, Yun Chang ; Kim, Jeoung Woo ; Choi, Yang-Kyu
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon
fDate :
6/1/2008 12:00:00 AM
Abstract :
A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An oxide/nitride/oxide layer and a floating-body are combined to perform a URAM operation in a single transistor. A buried n-well technology for NMOS allows hole accumulation for the 1T-DRAM operation in a p-type bulk substrate. The bulk FinFET URAM offers a cost-effective and fully compatible process with a conventional FinFET SONOS, and it also expedites heat dissipation. Highly reliable NVM and high-speed 1T-DRAM operation are confirmed, and it was also verified that there is no disturbance between the two memory functions.
Keywords :
DRAM chips; MOSFET; FinFET SONOS; URAM cell; bulk FinFET; capacitorless 1T-DRAM; multifunctioning NVM; nonvolatile-memory; p-type bulk substrate; transistor; unified-RAM; Charge carrier processes; Costs; Electron traps; Embedded system; FinFETs; MOS devices; Nonvolatile memory; Random access memory; SONOS devices; Tunneling; 1T-DRAM; Bulk FinFET; FinFET; SONOS; capacitorless DRAM; nonvolatile memory (NVM); unified-RAM (URAM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.922142
