DocumentCode :
1226194
Title :
Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique
Author :
Jiang, Y. ; Singh, N. ; Liow, T.Y. ; Loh, W.-Y. ; Balakumar, S. ; Hoe, K.M. ; Tung, C.H. ; Bliznetsov, V. ; Rustagi, S.C. ; Lo, G.Q. ; Chan, D.S.H. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore
Volume :
29
Issue :
6
fYear :
2008
fDate :
6/1/2008 12:00:00 AM
Firstpage :
595
Lastpage :
598
Abstract :
A top-down approach of forming SiGe-nanowire (SGNW) MOSFET, with Ge concentration modulated along the source/drain (Si0.7Ge0.3) to channel (Si0.3Ge0.7) regions, is presented. Fabricated by utilizing a pattern-size-dependent Ge-condensation technique, the SGNW heterostructure PMOS device exhibits 4.5times enhancement in the drive current and transconductance (Gm) as compared to the homojunction planar device (Si0.7Ge0.3). This large enhancement can be attributed to several factors including Omega-gated nanowire structure, enhanced hole injection efficiency (due to valence band offset), and improved hole mobility (due to compressive strain and Ge enrichment in the nanowire channel).
Keywords :
Ge-Si alloys; MOSFET; nanowires; Omega-gated nanowire structure; Si0.7Ge0.3; drive current; heterostructure PMOS device; hole injection; hole mobility; homojunction planar device; nanowire MOSFET; pattern-dependent Ge-condensation technique; FETs; Germanium silicon alloys; Heterojunctions; Laboratories; MOSFET circuits; Microelectronics; Oxidation; Silicon germanium; Substrates; Transconductance; Ge condensation; SiGe nanowires (SGNWs); heterostructure;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.922548
Filename :
4526775
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1226194
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