Title :
Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect
Author :
Su, V.C. ; Lin, I.S. ; Kuo, J.B. ; Lin, G.S. ; Chen, D. ; Yeh, C.S. ; Tsai, C.T. ; Ma, M.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
fDate :
6/1/2008 12:00:00 AM
Abstract :
This letter reports the shallow-trench-isolation (STI)-induced mechanical-stress-related breakdown behavior of the 40-nm PD-SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, breakdown occurs at a higher drain voltage for the device with a smaller S/D length of 0.17 mum due to the weaker function of the parasitic bipolar device, which is offset by the stronger impact ionization in the post-pinchoff region coming from the bandgap narrowing generated by the STI-induced mechanical stress.
Keywords :
MOSFET; electric breakdown; ionisation; silicon-on-insulator; PD-SOI NMOS device; breakdown behavior; drain voltage; impact ionization; mechanical stress effect; parasitic bipolar device; shallow-trench-isolation; size 0.17 mum; size 40 nm; Breakdown voltage; Electric breakdown; Impact ionization; Length measurement; MOS devices; Mechanical variables measurement; Photonic band gap; Silicon on insulator technology; Stress measurement; Testing; CMOSFETs; silicon on insulator technology;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.922971
