A Novel SR Latch Device Realized by Integration of Three-Terminal Ballistic Junctions in InGaAs/InP

Author

Sun, Jie ; Wallin, Daniel ; Maximov, Ivan ; Xu, H.Q.

Author_Institution

Div. of Solid State Phys., Lund Univ., Lund

Volume

29

Issue

6

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

540

Lastpage

542

Abstract

In this letter, a novel sequential logic device based on three-terminal ballistic junctions (TBJs) is proposed and demonstrated. Two TBJs and two in-plane gates are laterally integrated in a high-electron-mobility InGaAs/InP quantum-well material by a single-step lithography process. Electrical measurements reveal that the integrated device functions as a set-reset (SR) latch with voltage gains at room temperature. The demonstrated device provides a new and simple circuit design for SR latches in digital electronics.

Keywords

III-V semiconductors; flip-flops; gallium arsenide; indium compounds; lithography; logic devices; nanoelectronics; quantum well devices; sequential circuits; InGaAs-InP; digital electronics; electrical measurements; high-electron-mobility quantum-well materials; in-plane gates; integrated device functions; integrated nanostructure; nanoelectronic devices; sequential logic device; set-reset latch; single-step lithography process; three-terminal ballistic junctions; Electric variables measurement; Gain measurement; Indium gallium arsenide; Indium phosphide; Integrated circuit measurements; Latches; Lithography; Logic devices; Quantum well devices; Strontium; Nanoelectronics; set–reset (SR) latch; three-terminal ballistic junction (TBJ);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.922983

Filename

4526779