Title :
Polarization independent bulk active region semiconductor optical amplifiers for 1.3 μm wavelengths
Author :
Holtmann, C. ; Besse, P.-A. ; Brenner, T. ; Melchior, H.
Author_Institution :
Inst. for Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
fDate :
3/1/1996 12:00:00 AM
Abstract :
Semiconductor optical amplifiers for 1.3 μm are realized combining single-step grown bulk InGaAsP active region with ridge-waveguides. Achieved fiber-to-fiber gains are in excess of 27 dB with spectral ripples below 0.2 dB. Gain is polarization insensitive to within 1 dB over the entire range of driving current, 1.28 μm to 1.34 μm wavelength and 10/spl deg/C to 50/spl deg/C heat sink temperature. Intrinsic noise figure is 6.3 dB. Gain saturates at +10 dBm.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heat sinks; indium compounds; laser noise; light polarisation; optical saturation; ridge waveguides; semiconductor device noise; semiconductor lasers; waveguide lasers; 1.3 mum; 10 to 50 C; 27 dB; bulk InGaAsP active region; driving current; fiber-to-fiber gains; gain saturates; heat sink temperature; intrinsic noise figure; polarization independent bulk active region semiconductor optical amplifiers; polarization insensitive; ridge-waveguides; single-step grown; spectral ripples; Gain; Optical fiber communication; Optical fiber networks; Optical fiber polarization; Optical polarization; Optical saturation; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission; Temperature distribution;
Journal_Title :
Photonics Technology Letters, IEEE
