DocumentCode :
1226365
Title :
High dynamic range 2-TFT amplified pixel sensor architecture for digital mammography tomosynthesis
Author :
Taghibakhsh, F. ; Karim, K.S.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC
Volume :
1
Issue :
1
fYear :
2007
fDate :
2/1/2007 12:00:00 AM
Firstpage :
87
Lastpage :
92
Abstract :
On-pixel amplifiers in amorphous silicon (a-Si) technology are an attractive replacement for industry standard on-pixel switch architectures in active matrix flat panel imagers in order to meet the low noise requirements of low-dose digital imaging modalities such as x-ray fluoroscopy and, more recently, 3D mammography tomosynthesis. However, implementing a-Si pixel amplifiers requires high-performance thin film transistors (TFTs) that are relatively large in size. In this research, a novel high dynamic range amplified pixel architecture using only two TFTs is introduced that is capable of amplifying the sensor value with a user controllable gain over a wide input range. Circuit operation and driving circuits required for on-pixel amplifier arrays are investigated, and simulation results are presented that indicate the feasibility of this pixel architecture for high resolution, low noise and x-ray tomosynthesis applications
Keywords :
X-ray imaging; amplifiers; biomedical equipment; biomedical imaging; detector circuits; driver circuits; image sensors; mammography; thin film transistors; 2-TFT; 3D mammography; Si; TFT5; active matrix flat panel imagers; amorphous silicon technology; amplified pixel sensor; digital mammography tomosynthesis; thin film transistors;
fLanguage :
English
Journal_Title :
Circuits, Devices & Systems, IET
Publisher :
iet
ISSN :
1751-858X
Type :
jour
DOI :
10.1049/iet-cds:20060217
Filename :
4123980
Link To Document :
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