Modeling of time-dependent dielectric breakdown in copper metallization

Author

Wu, Wen ; Duan, Xiaodong ; Yuan, Jiann S.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA

Volume

3

Issue

2

fYear

2003

fDate

6/1/2003 12:00:00 AM

Firstpage

26

Lastpage

30

Abstract

Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu⁺ diffusion and drift is investigated. An analytical model to predict the lifetime of time-dependent dielectric breakdown is developed. The model predictions agree well with the previously published experimental data at different electric fields and temperatures. Under an acceleration stress condition, the lifetime is proportional to electric field exponentially and consistent with the E model.

Keywords

copper; diffusion; electric breakdown; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; semiconductor process modelling; Cu; Cu⁺ diffusion; Cu⁺ drift; E model; ULSI circuit interconnections; acceleration stress condition; analytical model; copper interconnects; copper metallization; electric field exponential dependence; general continuity equation; lifetime; reliability problem; time-dependent dielectric breakdown; Copper; Degradation; Dielectric breakdown; Equations; Integrated circuit interconnections; Leakage current; Metallization; Potential well; Silicon; Stress;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2003.811602

Filename

1208282