Title :
Effect of the ionization rate ratio on nonlinear distortion in avalanche photodiodes
Author :
Kagawa, Toshiaki ; Iwamura, Hidetoshi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
3/1/1996 12:00:00 AM
Abstract :
The effect of the ionization rate ratio on the nonlinear distortion of avalanche photodiodes (APD´s) was studied theoretically and experimentally. In the case of pure electron injection into the multiplication layer, the distortion decreases when the electron ionization rate become much larger than that of hole. The calculation is consistent with the experimentally measured distortion of superlattice and Ge avalanche photodiodes.
Keywords :
avalanche photodiodes; electron impact ionisation; elemental semiconductors; germanium; ionisation; nonlinear optics; optical noise; photodetectors; Ge; Ge avalanche photodiodes; avalanche photodiodes; electron ionization rate; ionization rate ratio; multiplication layer; nonlinear distortion; pure electron injection; superlattice photodiodes; Avalanche photodiodes; Charge carrier processes; Distortion measurement; Electron optics; Frequency; Ionization; Nonlinear distortion; Optical distortion; Optical modulation; Superlattices;
Journal_Title :
Photonics Technology Letters, IEEE
