DocumentCode
1226914
Title
High-performance second-harmonic operation W-band GaAs Gunn diodes
Author
Teng, S. J Jerome ; Goldwasser, Robert E.
Author_Institution
Alpha Ind. Inc., St. Louis, MO, USA
Volume
10
Issue
9
fYear
1989
Firstpage
412
Lastpage
414
Abstract
High output power performance and DC-to-RF conversion efficiency of second-harmonic-operation W-band (75-110 GHz) GaAs Gunn diodes is reported. Output powers of 96 and 48 mW at 94 and 103 GHz, respectively, with a DC-to-Rf conversion efficiency of 2.7 and 2.3 percent, have been achieved using single-diode GaAs Gunn oscillators. The operation of these diodes requires 2 to 4 W of DC power consumption.<>
Keywords
Gunn diodes; Gunn oscillators; III-V semiconductors; gallium arsenide; 103 GHz; 2.3 percent; 2.7 percent; 48 mW; 75 to 110 GHz; 94 GHz; 96 mW; DC/RF conversion efficiency; EHF; GaAs; Gunn diodes; III-V semiconductors; MM-wave operation; W-band; high output power performance; microwave devices; millimetre wave type; second-harmonic operation; single diode oscillators; Diodes; Energy consumption; Frequency; Gallium arsenide; Gold; Gunn devices; Injection-locked oscillators; Local oscillators; Microwave oscillators; Power generation;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.34726
Filename
34726
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