Integration of a modulated barrier photodiode with a doped-channel quasi-MISFET

Author

Li, W.Q. ; Bhattacharya, Pallab K.

Author_Institution

Center for High-Frequency Microelectron., Michigan Univ., Ann Arbor, MI, USA

Volume

10

Issue

9

fYear

1989

Firstpage

415

Lastpage

416

Abstract

An integration scheme for a front-end photoreceiver is demonstrated, wherein an identical GaAs-InGaAs-AlGaAs heterostructure is used for realizing a modulated barrier photodiode (MBP) and a doped-channel quasi-MISFET. The detectors exhibit optical gains of 200. The FETs have an extrinsic transconductance of 250 mS/mm, with f/sub f/=12 GHz and f/sub max/=21 GHz.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; photodetectors; photodiodes; receivers; 12 GHz; 21 GHz; 250 mS; GaAs-InGaAs-AlGaAs heterostructure; III-V semiconductors; doped-channel quasi-MISFET; extrinsic transconductance; front-end photoreceiver; integration scheme; modulated barrier photodiode; optical communication equipment integrated optoelectronics; Circuits; Diodes; FETs; Gain measurement; Gallium arsenide; Microwave devices; Microwave measurements; Optical devices; Optical modulation; Photodiodes;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.34727

Filename

34727