High-speed Ga/sub 0.47/In/sub 0.53/As MISIM photodetectors with dielectric-assisted Schottky barriers

Author

Chan, Winston K. ; Chang, Gee-Kung ; Bhat, Rajaram ; Schlotter, N.E. ; Nguyen, C.K.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

10

Issue

9

fYear

1989

Firstpage

417

Lastpage

419

Abstract

A technique is described for fabricating high-speed metal-insulator-semiconductor-insulator-metal (MISIM) photodetectors for high-speed fiber-optic systems. These devices make use of a Langmuir-Blodgett film enhanced Schottky barrier to achieve broadband linear response to 13 GHz at low bias voltage (5 V) with approximately 0.9 A/W external responsivity, 15 V breakdown voltage, and approximately 2 mu A dark current. A gain of about 2 and a 5% tail in the temporal response are analyzed. The needed bias and the device processing are compatible with those for integrated receivers.<>

Keywords

III-V semiconductors; Langmuir-Blodgett films; Schottky effect; gallium arsenide; indium compounds; integrated optoelectronics; metal-insulator-semiconductor devices; optical communication equipment; photodetectors; 13 GHz; 15 V; 5 V; Ga/sub 0.47/In/sub 0.53/As; III-V semiconductors; Langmuir-Blodgett film; MISIM photodetectors; breakdown voltage; broadband linear response; dark current; dielectric-assisted Schottky barriers; high-speed fiber-optic systems; integrated optoelectronics; integrated receivers; low bias voltage; metal-insulator-semiconductor-insulator-metal; Dark current; Detectors; Dielectrics; Electrodes; Etching; Metal-insulator structures; Photoconductivity; Photodetectors; Plasma devices; Schottky barriers;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.34728

Filename

34728