Title :
Metal oxide semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method
Author :
Shen, Yi-Pin ; Hwu, Jem-Gwo
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
3/1/1996 12:00:00 AM
Abstract :
In this study, a planar metal-oxide-semiconductor (MOS) solar cell with silicon dioxide prepared by liquid-phase deposition (LPD) method is proposed. The thickness of the insulating layer used is up to 220 /spl Aring/. Although the thickness of the insulating layer is thick enough to prevent tunneling, photovoltaic characteristics are found. For a cell with an active area of 0.118 cm/sup 2/ exposed under a 100 W bulb at 15 cm, short-circuit currents up to 0.164 mA are obtained. The fill factor is up to 71% and the open-circuit voltage is 0.35 V on average.
Keywords :
MIS devices; liquid phase epitaxial growth; optical planar waveguides; optical waveguide components; solar cells; 0.164 mA; 0.35 V; 100 W; 15 cm; 220 A; active area; fill factor; insulating layer; liquid-phase deposition method; metal oxide semiconductor solar cells; open-circuit voltage; photovoltaic characteristics; planar metal-oxide-semiconductor solar cell; short-circuit currents; silicon dioxide; Aluminum; Diodes; Insulation; Photovoltaic cells; Photovoltaic systems; Silicon compounds; Solar power generation; Temperature; Tunneling; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
