Metal oxide semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method

Author

Shen, Yi-Pin ; Hwu, Jem-Gwo

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

8

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

420

Lastpage

421

Abstract

In this study, a planar metal-oxide-semiconductor (MOS) solar cell with silicon dioxide prepared by liquid-phase deposition (LPD) method is proposed. The thickness of the insulating layer used is up to 220 /spl Aring/. Although the thickness of the insulating layer is thick enough to prevent tunneling, photovoltaic characteristics are found. For a cell with an active area of 0.118 cm/sup 2/ exposed under a 100 W bulb at 15 cm, short-circuit currents up to 0.164 mA are obtained. The fill factor is up to 71% and the open-circuit voltage is 0.35 V on average.

Keywords

MIS devices; liquid phase epitaxial growth; optical planar waveguides; optical waveguide components; solar cells; 0.164 mA; 0.35 V; 100 W; 15 cm; 220 A; active area; fill factor; insulating layer; liquid-phase deposition method; metal oxide semiconductor solar cells; open-circuit voltage; photovoltaic characteristics; planar metal-oxide-semiconductor solar cell; short-circuit currents; silicon dioxide; Aluminum; Diodes; Insulation; Photovoltaic cells; Photovoltaic systems; Silicon compounds; Solar power generation; Temperature; Tunneling; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.481154

Filename

481154