High-speed InGaAlAs/InAlAs multiple quantum well optical modulators with bandwidths in excess of 20 GHz at 1.55 mu m

Author

Kotaka, Isamu ; Wakita, Koichi ; Mitomi, Osamu ; Asai, Hiromitsu ; Kawamura, Yuichi

Author_Institution

Opto-Electron. Lab., NTT, Kanagawa, Japan

Volume

1

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

100

Lastpage

101

Abstract

The modulator has a large on/off ratio, a low driving voltage (4 V), and operates in the 1.55- mu m wavelength region. Small device capacitance (0.2 pF) has been obtained by using spin-coated polyimides under the bonding pads, and small stray capacitance (0.07 pF) and bonding wide inductance (0.3 nH) have been realized. The modulator requires the lowest power yet reported for a high-frequency-operation external modulator.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; optical modulation; semiconductor quantum wells; 0.07 pF; 0.2 pF; 1.55 micron; 20 GHz; 4 V; InGaAlAs-InAlAs; bandwidths; bonding pads; bonding wide inductance; device capacitance; driving voltage; high-frequency-operation external modulator; high-speed modulators; integrated optics; multiple quantum well optical modulators; on/off ratio; semiconductor; spin-coated polyimides; stray capacitance; Bandwidth; Bonding; Chirp modulation; High speed optical techniques; Indium compounds; Optical modulation; Optical polarization; Optical waveguides; Quantum well devices; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.34753

Filename

34753