Characterization of via connections in silicon circuit boards

Author

Quine, John P. ; Webster, Harold F. ; Glascock, Homer H., II ; Carlson, Richard O.

Author_Institution

General Electric Co., Schenectady, NY, USA

Volume

36

Issue

1

fYear

1988

fDate

1/1/1988 12:00:00 AM

Firstpage

21

Lastpage

27

Abstract

Conducting vias, isolated by silicon dioxide from a bulk silicon wafer and used to interconnect stripline transmission lines on opposite surfaces of the wafer, are analyzed. The net VSWR (virtual standing wave ratio) and insertion loss for a single via and the crosstalk or coupling between two nearby vias are determined as a function of geometry, frequency, and silicon resistivity. For small via dimensions and frequencies up to 1 GHz, the analysis predicts low VSWR and low insertion loss, provided the silicon resistivity is greater than about 100 Ω-cm. It is shown that crosstalk can be small, and is mostly due to inductive coupling

Keywords

crosstalk; elemental semiconductors; hybrid integrated circuits; losses; microwave integrated circuits; silicon; strip line components; 1 GHz; MIC; Si-SiO₂; VSWR; circuit boards; crosstalk; frequency; geometry; hybrid IC; inductive coupling; insertion loss; microstrip; microwave circuits; resistivity; semiconductor substrate; stripline transmission lines; via connections; virtual standing wave ratio; Conductivity; Coupling circuits; Crosstalk; Distributed parameter circuits; Frequency; Insertion loss; Integrated circuit interconnections; Printed circuits; Silicon compounds; Stripline;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3477

Filename

3477