Saturation intensity and time response of InGaAs-InGaP MQW optical modulators

Author

Watson, M.E. ; Chilla, J.L.A. ; Rocca, J.J. ; Kim, J.-W. ; Lile, D.L. ; Vogt, T.J. ; Robinson, G.Y.

Author_Institution

Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA

Volume

31

Issue

2

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

254

Lastpage

260

Abstract

We report modulation saturation and time response measurements on InGaAs-InGaP MQW modulators. The measurements yield a saturation intensity of (3.7±0.1) kW/cm² for a 0-10 V swing and switching times between 10 and 90 ns, depending on the bias voltage and incident light intensity. The observed dependence indicates that field screening due to carrier build-up is the dominant physical mechanism determining both the speed and the saturation intensity. This conclusion is supported by results of theoretical calculations

Keywords

III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical saturation; semiconductor quantum wells; 0 to 10 V; 10 to 90 ns; InGaAs-InGaP; InGaAs-InGaP MQW optical modulators; carrier build-up; field screening; modulation saturation; saturation intensity; speed; switching times; time response; High speed optical techniques; Intensity modulation; Optical devices; Optical filters; Optical modulation; Optical saturation; Pump lasers; Quantum well devices; Time factors; Time measurement;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.348053

Filename

348053