A comprehensive analysis of SOI-TFET with novel AlxGa1−xAs channel material

Author

Chander, Sweta ; Baishya, S.

Author_Institution

ECE Dept., NIT Silchar, Silchar, India

fYear

2014

fDate

6-8 March 2014

Firstpage

1

Lastpage

4

Abstract

In this paper, first time we have analyzed Al_xGa_1-xAs as a novel channel material for SOI based Tunnel Field Effect Transistor (TFET) with V_DD = 0.7. This direct bandgap channel material Al_0.2Ga_0.8As is compared with other channel materials that show the good device features. Using this material as channel we can see that the leakage current is very low as well as the Miller capacitance is also very small as compared to other channel materials. The only disadvantage of using Al_xGa_1-xAs as channel is the low ON current that can be improved by using Si_1-xGe_x as source and drain. The main objective of this paper is to introduce Al_xGa_1-xAs as the channel material for TFETs.

Keywords

III-V semiconductors; aluminium compounds; capacitance; field effect transistors; gallium arsenide; leakage currents; semiconductor device models; silicon-on-insulator; tunnel transistors; Al_xGa_1-xAs; Miller capacitance; SOI based tunnel field effect transistor; SOI-TFET; direct bandgap channel material; leakage current; Capacitance; Field effect transistors; Gallium arsenide; III-V semiconductor materials; Silicon; Tunneling; III-V semiconductor materials; Miller Capacitance; SOI; Silicon-Germanium; Subthreshold Swing; Tunnel FET;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICDCS), 2014 2nd International Conference on

Conference_Location

Combiatore

Type

conf

DOI

10.1109/ICDCSyst.2014.6926155

Filename

6926155