Title :
A comprehensive analysis of SOI-TFET with novel AlxGa1−xAs channel material
Author :
Chander, Sweta ; Baishya, S.
Author_Institution :
ECE Dept., NIT Silchar, Silchar, India
Abstract :
In this paper, first time we have analyzed AlxGa1-xAs as a novel channel material for SOI based Tunnel Field Effect Transistor (TFET) with VDD = 0.7. This direct bandgap channel material Al0.2Ga0.8As is compared with other channel materials that show the good device features. Using this material as channel we can see that the leakage current is very low as well as the Miller capacitance is also very small as compared to other channel materials. The only disadvantage of using AlxGa1-xAs as channel is the low ON current that can be improved by using Si1-xGex as source and drain. The main objective of this paper is to introduce AlxGa1-xAs as the channel material for TFETs.
Keywords :
III-V semiconductors; aluminium compounds; capacitance; field effect transistors; gallium arsenide; leakage currents; semiconductor device models; silicon-on-insulator; tunnel transistors; AlxGa1-xAs; Miller capacitance; SOI based tunnel field effect transistor; SOI-TFET; direct bandgap channel material; leakage current; Capacitance; Field effect transistors; Gallium arsenide; III-V semiconductor materials; Silicon; Tunneling; III-V semiconductor materials; Miller Capacitance; SOI; Silicon-Germanium; Subthreshold Swing; Tunnel FET;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2014 2nd International Conference on
Conference_Location :
Combiatore
DOI :
10.1109/ICDCSyst.2014.6926155
