Title :
A dual-gate FET subharmonic injection-locked self-oscillating active integrated antenna for RF transmission
Author :
Chen, Yan ; Chen, Zhizhang
Author_Institution :
Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada
fDate :
6/1/2003 12:00:00 AM
Abstract :
A planar subharmonic injection-locked GaAs dual-gate MESFET (DGMESFET) self-oscillating active integrated antenna (AIA) is presented for RF transmission. The oscillation is obtained with one gate of the DGMESFET at 2.052 GHz, and the stabilization of the oscillation is achieved by injecting a small subharmonic low-noise signal into the other gate of the DGMESFET. Phase noise was measured to be -98 dBc/Hz at the 10 KHz offset. The structure was shown to have the potential in performing triple functions of radiation, low noise oscillation and mixing (or modulation), a capability required for low cost wireless systems such as RFID tags and indoor positioning systems.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; active antennas; gallium arsenide; injection locked oscillators; phase noise; 2.052 GHz; GaAs; GaAs dual-gate MESFET; RF transmission; RFID tag; indoor positioning system; phase noise; planar active integrated antenna; self-oscillation; subharmonic injection locking; wireless system; Antenna measurements; Cost function; FETs; Gallium arsenide; Noise measurement; Phase measurement; Phase noise; RFID tags; Radio frequency; Transmitting antennas;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2003.814093
