Title :
A V-band up-converting InP HEMT active mixer with low LO-power requirements
Author :
Orzati, A. ; Robin, F. ; Meier, H. ; Benedikter, H. ; Bachtold, W.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fDate :
6/1/2003 12:00:00 AM
Abstract :
We present a monolithically integrated up-converting active mixer that shifts a signal in the 16 GHz range up to the V-band using a 48 GHz local oscillator (LO) signal. The circuit was realized with the 0.2 μm InP HEMT in-house process of the Swiss Federal Institute of Technology in Zurich using coplanar-waveguide technology. Measurements of the fabricated circuit show a peak conversion gain of 1 dB at 64.5 GHz for -1.7 dBm LO power, LO suppression better than 30 dB and input third-order intercept point of -1.6 dBm. This mixer will be employed in the signal up-conversion path of a 60 GHz transceiver for indoor wireless LANs.
Keywords :
III-V semiconductors; coplanar waveguide components; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; millimetre wave frequency convertors; millimetre wave mixers; 0.2 micron; 1 dB; 16 GHz; 48 GHz; 60 GHz; 64.5 GHz; InP; LO power; LO suppression; V-band up-converting InP HEMT active mixer; conversion gain; coplanar waveguide technology; input third-order intercept point; millimeter-wave transceiver; monolithic integration; wireless LAN; Circuit simulation; Circuit synthesis; Frequency; HEMTs; Indium phosphide; Integrated circuit technology; Local oscillators; Threshold voltage; Transceivers; Wireless LAN;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2003.814094
