Noise analysis of a photoreceiver using a P-I-N and GaAs HBT distributed amplifier combination

Author

Tian, Xizhen ; Freundorfer, A.P. ; Roy, Langis

Author_Institution

Nortel Networks, Ottawa, Ont., Canada

Volume

13

Issue

6

fYear

2003

fDate

6/1/2003 12:00:00 AM

Firstpage

208

Lastpage

210

Abstract

A noise analysis for a common-collector-cascode traveling wave HBT preamplifier is developed. The photoreceiver, consisting of a P-I-N and GaAs HBT MMIC distributed amplifier, was implemented using Nortel´s f/sub T/=70 GHz GaAs HBT process, is the first to have a P-I-N mounted on the MMIC chip. The P-I-N preamplifier, having a measured bandwidth of 22 GHz, displayed a measured average equivalent input noise current density of 24 pA//spl radic/Hz. Good agreement was obtained between the predicted and measured noise performance.

Keywords

MMIC amplifiers; bipolar MMIC; distributed amplifiers; heterojunction bipolar transistors; integrated circuit noise; optical receivers; preamplifiers; travelling wave amplifiers; 22 GHz; 70 GHz; GaAs; HBT distributed amplifier; MMIC distributed amplifier; P-I-N preamplifier; average equivalent input noise current density; common-collector-cascode traveling wave HBT preamplifier; noise performance; optical receiver applications; photoreceiver; Current measurement; Density measurement; Distributed amplifiers; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Noise measurement; PIN photodiodes; Preamplifiers; Semiconductor device measurement;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.814096

Filename

1208409