Title :
TCAD assessment of dual material gate nanoscale RingFET (DMG-RingFET) for analog and digital applications
Author :
Kumar, Sudhakar ; Kumari, Vandana ; Gupta, Madhu ; Saxena, Manoj
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
In this work, the impact of gate material engineering on the performance of RingFET architecture i.e. Dual Material Gate RingFET (DMG-RingFET) has been investigated for the first time using ATLAS 3D device simulation. A fair comparison has also been drawn between the performance of DMG-RingFET and SMG RingFET device architectures. The impact of high-k gate dielectric on the performance of DMG RingFET has also been presented. Various important analog and digital performance metrics such as drain current (Ids), transconductance (gm), transconductance generation efficiency (gm/Ids), early voltage (Vea), output voltage of inverter and inverter gain has been discussed in detail. In addition to this investigation of DMG-RingFET as an inverter has been performed to demonstrate the reliability of DMG-RingFET architecture for digital circuit application.
Keywords :
analogue integrated circuits; digital integrated circuits; field effect transistors; invertors; semiconductor device models; semiconductor device reliability; technology CAD (electronics); ATLAS 3D device simulation; DMG-RingFET; SMG RingFET device architectures; TCAD assessment; analog applications; digital applications; drain current; dual material gate nanoscale RingFET; early voltage; high-k gate dielectric; inverter gain; output voltage; reliability; transconductance generation efficiency; Inverters; Logic gates; MOSFET; Materials; Nanoscale devices; Performance evaluation; Transconductance; ATLAS-3D; Analog Performance; Dual-Material Gate (DMG); RingFET;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2014 2nd International Conference on
Conference_Location :
Combiatore
DOI :
10.1109/ICDCSyst.2014.6926181
