Switching performance analyses of gate material and gate dielectric engineered TFET architectures and impact of interface oxide charges

In this work performance investigation of three different Double Gate n-type TFET architectures i.e. Dual material Gate (DMG) TFET, Hetero-Dielectric (H-D) TFET and Dual Material Hetero-Dielectric (DMG H-D) TFET has been performed for Digital Circuit Applications. Moreover, a comparative study among these three aforementioned device architectures has been made in terms of performance metrics such as Total gate Capacitance (C_gg), Miller capacitance (C_gd), fall propagation delay (t_pHL) and peak overshoot voltage (V_p). In this regard, exhaustive simulations have been done through Atlas Device Simulator. Furthermore, the impact of metal gate (M1) work function and length L₁ variation over device switching characteristics has also been observed. Impact of Interface oxide charges (positive and negative) on the transient behavior, threshold voltage, I_on, I_off, I_on/I_off has also been studied for all three device architectures. It has been investigated that DMG H-D TFET which is the proposed architecture outperforms other devices i.e. DMG TFET and H-D TFET in terms of comparatively lower value of t_pHL, V_p and miller capacitance C_gd.