Title :
A fully analytical AC large-signal model of the GaAs MESFET for nonlinear network analysis and design
Author_Institution :
RAFAEL, Haifa, Israel
fDate :
1/1/1988 12:00:00 AM
Abstract :
A fully analytical version of an AC large-signal model for the GaAs MESFET is presented. The source model is based on basic principles and the actual physics and geometry of the device. The analytical version was developed by curve fitting the analytical expressions to the source model. The accuracy of the model for microwave circuits is demonstrated using simulation examples of a power amplifier and a mixer
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; nonlinear network analysis; nonlinear network synthesis; semiconductor device models; solid-state microwave circuits; solid-state microwave devices; AC large-signal model; GaAs; III-V semiconductor; MESFET; curve fitting; microwave circuits; network design; nonlinear network analysis; source model; Analytical models; Circuit simulation; Curve fitting; Gallium arsenide; Geometry; MESFETs; Microwave circuits; Microwave devices; Physics; Solid modeling;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
