Title :
Impact of Structure Relaxation on the Ultimate Performance of a Small Diameter, n-Type 〈110 〉 Si-Nanowire MOSFET
Author :
Liang, Gengchiau ; Kienle, Diego ; Patil, Sunil K R ; Wang, Jing ; Ghosh, Avik W. ; Khare, Sanjay V.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
fDate :
3/1/2007 12:00:00 AM
Abstract :
We investigate the impact of structure relaxation on the upper performance of a silicon nanowire metal-oxide-semiconductor field-effect-transistor (MOSFET) with small diameter employing a semiclassical transport model to calculate its ballistic I-V characteristics. For wires along the lang110rang axis and 1 nm diameter, structure relaxation induces large changes in the bond length of silicon atoms at the surface (~33%). Despite these bond length variations, the effect of reconstruction on the ballistic ON-current of Si-NW MOSFETs turns out negligible in the case considered, which can be attributed to an only slight variation of the electron effective mass after reconstruction
Keywords :
MOSFET; ballistic transport; band structure; bond lengths; effective mass; electronic structure; elemental semiconductors; nanowires; silicon; surface reconstruction; 1 nm; MOSFET; Si; ballistic I-V characteristics; bond length; electron effective mass; electronic band structure; metal-oxide-semiconductor field-effect-transistor; quantum confinement; semiclassical transport model; semiconductor nanowire; structural relaxation; surface reconstruction; Bonding; FETs; Geometry; MOSFET circuits; Nanoscale devices; Orbital calculations; Physics; Semiconductor materials; Silicon; Surface reconstruction; Bandstructure; field-effect transistor (FET); geometry optimization; nanowire; quantum confinement; tight binding;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2007.891816
