DocumentCode :
1228415
Title :
Engineering Exchange Coupling in Double Elliptic Quantum Dots
Author :
Zhang, Lingxiao ; Melnikov, Dmitriy V. ; Leburton, Jean-Pierre
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL
Volume :
6
Issue :
2
fYear :
2007
fDate :
3/1/2007 12:00:00 AM
Firstpage :
250
Lastpage :
255
Abstract :
Coupled elliptic quantum dots with different aspect ratios containing up to two electrons are studied using a model confinement potential in the presence of magnetic fields. Single and two-particle Schrodinger equations are solved using numerical exact diagonalization to obtain the exchange energy and chemical potentials. As the ratio between the confinement strengths in directions perpendicular and parallel to the coupling direction of the double dots increases, the exchange energy at zero magnetic field increases, while the magnetic field of the singlet-triplet transition decreases. By investigating the charge stability diagram, we find interdot quantum mechanical coupling increases with the dot aspect ratio, whereas the electrostatic coupling between the two dots remains nearly constant. With increasing interdot detuning, the absolute value of the exchange energy increases superlinearly followed by saturation. This behavior is attributed to the electron density differences between the singlet and triplet states in the asymmetric QD systems
Keywords :
Schrodinger equation; chemical potential; exchange interactions (electron); magnetic field effects; semiconductor quantum dots; chemical potentials; confinement potential; diagonalization; double elliptic quantum dots; electron density; electrostatic coupling; exchange coupling; exchange energy; interdot quantum mechanical coupling; magnetic fields; singlet-triplet transition; two-particle Schrodinger equations; Chemicals; Couplings; Electrons; Magnetic confinement; Magnetic fields; Potential energy; Power engineering and energy; Quantum dots; Schrodinger equation; Stability; Exact diagonalization; exchange energy; quantum dots (QDs); simulation;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2007.891832
Filename :
4126514
Link To Document :
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