DocumentCode :
1228487
Title :
InP/InGaAs HBTs with n+-InP contacting layers grown by MOMBE using SiBr4
Author :
Fresina, M.T. ; Jackson, S.L. ; Stillman, G.E.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Volume :
30
Issue :
25
fYear :
1994
fDate :
12/8/1994 12:00:00 AM
Firstpage :
2177
Lastpage :
2178
Abstract :
InP/InGaAs heterojunction bipolar transistors (HBTs) with low resistance, nonalloyed TiPtAu contacts on n+-InP emitter and collector contacting layers have been demonstrated with excellent DC characteristics. A specific contact resistance of 5.42×10-8 Ω·cm2, which, to the best of our knowledge, is the lowest reported for TiPtAu on n-InP, has been measured on InP doped n=6.0×1019 cm-3 using SiBr4. This low contact resistance makes TiPtAu contacts on n-InP viable for InP/InGaAs HBTs
Keywords :
III-V semiconductors; chemical beam epitaxial growth; contact resistance; gallium arsenide; gold; heterojunction bipolar transistors; indium compounds; ohmic contacts; platinum; semiconductor-metal boundaries; titanium; DC characteristics; HBTs; MOMBE growth; SiBr4; SiBr4 doping source; Ti-Pt-Au-InP-InGaAs; heterojunction bipolar transistors; n+-InP contacting layers; nonalloyed TiPtAu contacts; specific contact resistance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19941451
Filename :
350119
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1228487
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