• DocumentCode
    1228513
  • Title

    Band offsets of In0.30Ga0.70As/In0.29 Al0.71As heterojunction grown on GaAs substrate

  • Author

    Shieh, J.L. ; Chyi, J.-I. ; Lin, R.J. ; Lin, R.M. ; Pan, J.W.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • Volume
    30
  • Issue
    25
  • fYear
    1994
  • fDate
    12/8/1994 12:00:00 AM
  • Firstpage
    2172
  • Lastpage
    2173
  • Abstract
    Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In 0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71±0.05 eV which corresponds to a conduction band offset to bandgap difference ratio ~0.66. The comparison between experimental and theoretical results is presented
  • Keywords
    III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; indium compounds; semiconductor heterojunctions; GaAs; GaAs substrate; In0.30Ga0.70As-In0.29Al0.71 As; band offsets; bandgap difference; conduction band discontinuity; current-voltage measurement; heterojunction; temperature-dependent I/V measurement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941445
  • Filename
    350122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1228513