DocumentCode :
1228613
Title :
Minimization of the mechanical-stress-induced inaccuracy in bandgap voltage references
Author :
Fruett, Fabiano ; Meijer, Gerard C M ; Bakker, Anton
Author_Institution :
State Univ. of Campinas, Brazil
Volume :
38
Issue :
7
fYear :
2003
fDate :
7/1/2003 12:00:00 AM
Firstpage :
1288
Lastpage :
1291
Abstract :
This paper shows a systematic approach to calculate and to minimize mechanical-stress-related problems in bandgap voltage references. Mechanical stress is the main cause of long-term drift and packaging-induced inaccuracy in bandgap voltage references. Especially, low-cost epoxy packaging can cause a large mechanical stress, being in the range from -200 to +200 MPa. This stress shows local variations over the chip area and changes over time or during thermal cycling. Due to the piezojunction effect, this stress causes changes and drift in the base-emitter voltages of bipolar transistors and consequently in the output voltage of bandgap references. In this paper, it is shown that, even when using low-cost IC and packaging technology, a bandgap reference with a high immunity for the effects of mechanical stress can be realized.
Keywords :
bipolar transistor circuits; energy gap; integrated circuit packaging; reference circuits; stress effects; IC technology; bandgap voltage reference; bipolar transistor; epoxy packaging; long-term drift; mechanical stress; piezojunction effect; thermal cycling; Bipolar transistors; Brazil Council; Helium; Integrated circuit packaging; Photonic band gap; Stability; Temperature dependence; Tensile stress; Thermal stresses; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2003.813286
Filename :
1208483
Link To Document :
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