• DocumentCode
    1228613
  • Title

    Minimization of the mechanical-stress-induced inaccuracy in bandgap voltage references

  • Author

    Fruett, Fabiano ; Meijer, Gerard C M ; Bakker, Anton

  • Author_Institution
    State Univ. of Campinas, Brazil
  • Volume
    38
  • Issue
    7
  • fYear
    2003
  • fDate
    7/1/2003 12:00:00 AM
  • Firstpage
    1288
  • Lastpage
    1291
  • Abstract
    This paper shows a systematic approach to calculate and to minimize mechanical-stress-related problems in bandgap voltage references. Mechanical stress is the main cause of long-term drift and packaging-induced inaccuracy in bandgap voltage references. Especially, low-cost epoxy packaging can cause a large mechanical stress, being in the range from -200 to +200 MPa. This stress shows local variations over the chip area and changes over time or during thermal cycling. Due to the piezojunction effect, this stress causes changes and drift in the base-emitter voltages of bipolar transistors and consequently in the output voltage of bandgap references. In this paper, it is shown that, even when using low-cost IC and packaging technology, a bandgap reference with a high immunity for the effects of mechanical stress can be realized.
  • Keywords
    bipolar transistor circuits; energy gap; integrated circuit packaging; reference circuits; stress effects; IC technology; bandgap voltage reference; bipolar transistor; epoxy packaging; long-term drift; mechanical stress; piezojunction effect; thermal cycling; Bipolar transistors; Brazil Council; Helium; Integrated circuit packaging; Photonic band gap; Stability; Temperature dependence; Tensile stress; Thermal stresses; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2003.813286
  • Filename
    1208483