Title :
A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects
Author :
Lime, Franois ; Iñiguez, Benjamin ; Moldovan, Oana
Author_Institution :
Electromagn. et Photonique (IMEP-LAHC), Inst. de Microelectron., Grenoble
fDate :
6/1/2008 12:00:00 AM
Abstract :
A drain-current model for undoped symmetric double-gate MOSFETs is proposed. Channel-length modulation and drain-induced barrier lowering are modeled by using an approximate solution of the 2D Poisson equation. The new model is valid and continuous in linear and saturation regimes, as well as in weak and strong inversions. Excellent agreement was found with Silvaco-ATLAS simulations.
Keywords :
MOSFET; Poisson equation; 2D Poisson equation; Channel-length modulation; Silvaco-ATLAS simulations; drain-induced barrier lowering; quasi 2D compact drain-current model; short-channel effects; undoped symmetric double-gate MOSFETs; CMOS technology; Capacitance; Fluctuations; Intrusion detection; MOSFETs; Poisson equations; Semiconductor device modeling; Semiconductor process modeling; Spine; Compact device modeling; MOSFET; double gate (DG); short-channel effects;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.921980
