Comparison Between the Noise Performance of Double- and Single-Gate InP-Based HEMTs

Author

Vasallo, Beatriz G. ; Wichmann, Nicolas ; Bollaert, Sylvain ; Roelens, Yannick ; Cappy, Alain ; González, Tomás ; Pardo, Daniel ; Mateos, Javier

Author_Institution

Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca

Volume

55

Issue

6

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

1535

Lastpage

1540

Abstract

The noise performance of InAlAs/InGaAs double-gate (DG) and standard high-electron-mobility transistors (HEMTs) is analyzed by means of an ensemble 2-D Monte Carlo simulator. The DG-HEMT is found to have a better noise behavior than the single-gate (SG) device. The results show a moderate decrease of the and noise parameters for the DG HEMT with respect to that of the SG device, since current fluctuations due to electrons injected into the buffer are eliminated. Moreover, the DG HEMT reveals a significantly lower extrinsic minimum noise figure and a higher associated gain , not only due to the better intrinsic performance but also to the lower contact resistances.

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; 2D Monte Carlo simulator; InAlAs-InGaAs; InP; double-gate HEMT; extrinsic minimum noise figure; high-electron-mobility transistor; noise performance; single-gate HEMT; Analytical models; Electrons; Fluctuations; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Monte Carlo methods; Noise figure; Performance analysis; Double-gate high-electron-mobility transistor (DG-HEMT); Monte Carlo (MC) simulations; noise behavior;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.921982

Filename

4527073