Improved Transistor Low Temperature Gain Characteristic by Driving Point Admittance Specification

A technique is presented whereby the temperature gain stability of a cascade of high frequency transistor bandpass amplifiers may be improved by utilizing the intrinsic parameter variations of the transistors. Analysis and supporting empirical evidence is presented which indicates that the temperature coefficient of gain variation is dependent upon the magnitude and phase of the short circuit input driving point admittance Yie.It is shown that cascades of transistors specified in terms Of Yie yield nearly flat low temperature gain characteristics.