DocumentCode :
1229189
Title :
Fabrication and Properties of 
Structure for Ferroelectric D
Author :
Xie, Dan ; Zang, Yongyuan ; Luo, Yafeng ; Ren, Tianling ; Liu, Litian
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing
Volume :
30
Issue :
5
fYear :
2009
fDate :
5/1/2009 12:00:00 AM
Firstpage :
463
Lastpage :
465
Abstract :
Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 400-nm-thick Bi3.15Nd0.85Ti3O12 (BNdT) ferroelectric film and 4-nm-thick hafnium oxide (HfO2) layer on silicon substrate have been fabricated and characterized. It is demonstrated that the Pt/Bi3.15Nd0.85Ti3O12/ HfO2/Si structure exhibits a large memory window of around 1.12 V at an operation voltage of 3.5 V. Moreover, the MFIS memory structure suffers only 10% degradation in the memory window after 1010 switching cycles. The retention time is 100 s, which is enough for ferroelectric DRAM field-effect-transistor application. The excellent performance is attributed to the formation of well-crystallized BNdT perovskite thin film on top of the HfO2 buffer layer, which serves as a good seed layer for BNdT crystallization, making the proposed Pt/Bi3.15Nd0.85Ti3O12/ HfO2/Si suitable for high-performance ferroelectric memories.
Keywords :
DRAM chips; MFIS structures; MIS capacitors; bismuth compounds; crystallisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; field effect transistors; hafnium compounds; neodymium compounds; platinum; silicon; MFIS memory structure; Pt-Bi3.15Nd0.85Ti3O12-HfO2-Si; crystallization; ferroelectric DRAM FET; ferroelectric field-effect-transistor; ferroelectric film; hafnium oxide layer; metal-ferroelectric-insulator-semiconductor capacitors; perovskite thin film; retention time; silicon substrate; size 4 nm; size 400 nm; switching cycles; time 100 s; voltage 3.5 V; Ferroelectric field-effect-transistor (FET); hafnium oxide; metal–ferroelectric–insulator–semiconductor (MFIS); neodymium-doped $hbox{Bi}_{4}hbox{Ti}_{3}hbox{O}_{12}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2016119
Filename :
4812066
Link To Document :
