• DocumentCode
    1229189
  • Title

    Fabrication and Properties of \\hbox {Pt}/\\hbox {Bi}_{3.15}\\hbox {Nd}_{0.85} \\hbox {Ti}_{3}\\hbox {O}_{12}/break\\hbox {HfO}_{2}/\\hbox {Si} Structure for Ferroelectric D

  • Author

    Xie, Dan ; Zang, Yongyuan ; Luo, Yafeng ; Ren, Tianling ; Liu, Litian

  • Author_Institution
    Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing
  • Volume
    30
  • Issue
    5
  • fYear
    2009
  • fDate
    5/1/2009 12:00:00 AM
  • Firstpage
    463
  • Lastpage
    465
  • Abstract
    Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 400-nm-thick Bi3.15Nd0.85Ti3O12 (BNdT) ferroelectric film and 4-nm-thick hafnium oxide (HfO2) layer on silicon substrate have been fabricated and characterized. It is demonstrated that the Pt/Bi3.15Nd0.85Ti3O12/ HfO2/Si structure exhibits a large memory window of around 1.12 V at an operation voltage of 3.5 V. Moreover, the MFIS memory structure suffers only 10% degradation in the memory window after 1010 switching cycles. The retention time is 100 s, which is enough for ferroelectric DRAM field-effect-transistor application. The excellent performance is attributed to the formation of well-crystallized BNdT perovskite thin film on top of the HfO2 buffer layer, which serves as a good seed layer for BNdT crystallization, making the proposed Pt/Bi3.15Nd0.85Ti3O12/ HfO2/Si suitable for high-performance ferroelectric memories.
  • Keywords
    DRAM chips; MFIS structures; MIS capacitors; bismuth compounds; crystallisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; field effect transistors; hafnium compounds; neodymium compounds; platinum; silicon; MFIS memory structure; Pt-Bi3.15Nd0.85Ti3O12-HfO2-Si; crystallization; ferroelectric DRAM FET; ferroelectric field-effect-transistor; ferroelectric film; hafnium oxide layer; metal-ferroelectric-insulator-semiconductor capacitors; perovskite thin film; retention time; silicon substrate; size 4 nm; size 400 nm; switching cycles; time 100 s; voltage 3.5 V; Ferroelectric field-effect-transistor (FET); hafnium oxide; metal–ferroelectric–insulator–semiconductor (MFIS); neodymium-doped $hbox{Bi}_{4}hbox{Ti}_{3}hbox{O}_{12}$;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2016119
  • Filename
    4812066
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1229189