DocumentCode
1229221
Title
Effective Modulation of Quadratic Voltage Coefficient of Capacitance in MIM Capacitors Using 
Dielectric Stack
Author
Yang, Jian-Jun ; Chen, Jing-De ; Wise, Rick ; Steinmann, Philipp ; Yu, Ming-Bin ; Kwong, Dim-Lee ; Li, Ming-Fu ; Yeo, Yee-Chia ; Zhu, Chunxiang
Author_Institution
Dept. Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Volume
30
Issue
5
fYear
2009
fDate
5/1/2009 12:00:00 AM
Firstpage
460
Lastpage
462
Abstract
We report the first demonstration of metal-insulator-metal (MIM) capacitors with Sm2O3/SiO2 stacked dielectrics for precision analog circuit applications. By using the ldquocanceling effectrdquo of the positive quadratic voltage coefficient of capacitance (VCC) of Sm2O3 and the negative quadratic VCC of SiO2, MIM capacitors with capacitance density exceeding 7.3 fF/mum2, quadratic VCC of around -50 ppm/V2, and leakage current density of 1 times 10-7 A/cm2 at +3.3 V are successfully demonstrated. The obtained capacitance density and quadratic VCC satisfy the technical requirements specified in the International Technology Roadmap for Semiconductors through the year 2013 for MIM capacitors to be used in precision analog circuit applications.
Keywords
MIM devices; analogue circuits; capacitors; dielectric devices; samarium compounds; silicon compounds; MIM capacitors; Sm2O3-SiO2; analog circuit applications; canceling effect; capacitance density; dielectric stack; leakage current density; metal-insulator-metal; positive quadratic voltage coefficient of capacitance; $hbox{SiO}_{2}$ $hbox{Sm}_{2}hbox{O}_{3}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2015970
Filename
4812069
Link To Document