DocumentCode :
1229221
Title :
Effective Modulation of Quadratic Voltage Coefficient of Capacitance in MIM Capacitors Using 
Dielectric Stack
Author :
Yang, Jian-Jun ; Chen, Jing-De ; Wise, Rick ; Steinmann, Philipp ; Yu, Ming-Bin ; Kwong, Dim-Lee ; Li, Ming-Fu ; Yeo, Yee-Chia ; Zhu, Chunxiang
Author_Institution :
Dept. Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Volume :
30
Issue :
5
fYear :
2009
fDate :
5/1/2009 12:00:00 AM
Firstpage :
460
Lastpage :
462
Abstract :
We report the first demonstration of metal-insulator-metal (MIM) capacitors with Sm2O3/SiO2 stacked dielectrics for precision analog circuit applications. By using the ldquocanceling effectrdquo of the positive quadratic voltage coefficient of capacitance (VCC) of Sm2O3 and the negative quadratic VCC of SiO2, MIM capacitors with capacitance density exceeding 7.3 fF/mum2, quadratic VCC of around -50 ppm/V2, and leakage current density of 1 times 10-7 A/cm2 at +3.3 V are successfully demonstrated. The obtained capacitance density and quadratic VCC satisfy the technical requirements specified in the International Technology Roadmap for Semiconductors through the year 2013 for MIM capacitors to be used in precision analog circuit applications.
Keywords :
MIM devices; analogue circuits; capacitors; dielectric devices; samarium compounds; silicon compounds; MIM capacitors; Sm2O3-SiO2; analog circuit applications; canceling effect; capacitance density; dielectric stack; leakage current density; metal-insulator-metal; positive quadratic voltage coefficient of capacitance; $hbox{SiO}_{2}$ $hbox{Sm}_{2}hbox{O}_{3}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2015970
Filename :
4812069
Link To Document :
