Title :
Radiation effects and hardening of MOS technology: devices and circuits
Author :
Hughes, H.L. ; Benedetto, J.M.
Author_Institution :
U.S. Naval Res. Lab., Washington, DC, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
Total ionizing dose radiation effects on the electrical properties of metal-oxide-semiconductor devices and integrated circuits are complex in nature and have changed much during decades of device evolution. These effects are caused by radiation-induced charge buildup in oxide and interfacial regions. This paper presents an overview of these radiation-induced effects, their dependencies, and the many different approaches to their mitigation.
Keywords :
CMOS analogue integrated circuits; integrated circuits; nuclear electronics; radiation hardening (electronics); readout electronics; MOS technology; aerospace testing; device evolution; integrated circuits; metal-oxide-semiconductor devices; radiation effects; radiation hardening; radiation-induced charge buildup; total ionizing dose radiation effects; CMOS digital integrated circuits; CMOS integrated circuits; CMOS memory circuits; Circuit testing; Integrated circuit technology; MOS devices; MOSFETs; Paramagnetic resonance; Radiation effects; Radiation hardening;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.812928
