Title :
Destructive single-event effects in semiconductor devices and ICs
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
Developments in the field of destructive single-event effects over the last 40 years are reviewed. Single-event latchup, single-event burnout, single-event gate rupture, and single-event snap-back are discussed beginning with the first observation of each effect, its phenomenology, and the development of present day understanding of the mechanisms involved.
Keywords :
integrated circuits; radiation effects; semiconductor devices; SEU; destructive single-event effects; semiconductor devices; single-event burnout; single-event gate rupture; single-event latchup; single-event snap-back; Aerospace engineering; CMOS technology; Degradation; MOSFETs; Semiconductor devices; Silicon; Single event upset; Space technology; Switches; Thyristors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.813137
