Title :
A 20-Gb/s silicon bipolar 1:4-demultiplexer IC
Author :
Lao, Zhihao ; Albers, Jens N. ; Langmann, Ulrich ; Schlag, Erwin
Author_Institution :
Mikroelektronik-Zentrum, Ruhr-Univ., Bochum, Germany
fDate :
2/1/1994 12:00:00 AM
Abstract :
This paper presents a 20-Gb/s 1:4-demultiplexer for future fiber-optic transmission systems. It uses an 0.4-μm emitter double polysilicon 21-GHz fT Si bipolar foundry process. This is the highest data rate of a 1:4-DEMUX reported so far in any technology. The 1:4-DEMUX features a tree-type architecture with one frequency divider and a channel switch circuit. The circuit design was carefully optimized to achieve high speed and moderate power dissipation. It consumes 1.4 W with a single -4.5-V supply
Keywords :
bipolar integrated circuits; demultiplexing equipment; integrated optoelectronics; optical communication equipment; silicon; 0.4 mum; 1.4 W; 1:4-DEMUX; 20 Gbit/s; 20-Gb/s Si bipolar 1:4-demultiplexer IC; 21 GHz; 4.5 V; 4.5-V supply; Si; Si bipolar foundry process; channel switch circuit; circuit design; data rate; emitter double; fiber-optic transmission systems; frequency divider; igh speed; moderate power dissipation; polysilicon; tree-type architecture; Bipolar integrated circuits; Bit rate; Clocks; Foundries; Frequency conversion; Latches; Master-slave; SONET; Silicon; Switches;
Journal_Title :
Lightwave Technology, Journal of
