Title :
On-Wafer Measurement of Transistor Noise Parameters at NIST
Author :
Randa, James ; Walker, David K.
Author_Institution :
Electromagn. Div., National Inst. of Stand. & Technol., Boulder, CO
fDate :
4/1/2007 12:00:00 AM
Abstract :
The National Institute of Standards and Technology has developed the capability to measure noise parameters on a wafer in the 1-12.4-GHz range. The authors describe the measurement method and the uncertainty analysis and present results of measurements on a highly reflective transistor. Typical standard uncertainties are within the range of 20-25 K in Tmin, which is the minimum transistor noise temperature, and about 0.03 in the magnitude of Gammaopt, which is the reflection coefficient for which Tmin occurs
Keywords :
UHF measurement; electric noise measurement; measurement uncertainty; microwave measurement; semiconductor device measurement; semiconductor device noise; transistors; 1 to 12.4 GHz; 20 to 25 K; NIST; National Institute of Standards and Technology; highly reflective transistor; noise parameter measurement; on-wafer measurement; transistor noise parameters; uncertainty analysis; Acoustic reflection; Calibration; Circuit noise; Measurement standards; NIST; Noise measurement; Optimized production technology; Probes; Time measurement; Working environment noise; Noise measurement; on-wafer measurement; transistor noise parameters; uncertainty analysis;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.2007.891145
