Near-infrared channel waveguides formed by electron-beam irradiation of silica layers on silicon substrates

Author

Syms, R.R.A. ; Tate, T.J. ; Lewandowski, J.J.

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK

Volume

12

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2085

Lastpage

2091

Abstract

Results are presented for channel guides formed by electron beam irradiation of silica layers formed on Si substrates by plasma-enhanced chemical vapor deposition. Electroplating is shown to be a simple method of fabricating the required surface mask. Optical insertion loss measurements performed at 1.525 μm wavelength show a strong dependence on the irradiation mask width, charge dose, and electron energy, and parameters for low propagation and coupling loss are identified. Optimum propagation losses are 0.4 dB/cm (TE), 0.75 dB/cm (TM). Spectral loss measurements are also presented for as-deposited and thermally annealed material, and it is shown that beneficial results are obtained by annealing before irradiation. The stability of irradiation-induced changes is also described

Keywords

electroplating; integrated optics; optical couplers; optical loss measurement; optical losses; optical waveguides; plasma CVD; silicon; substrates; 1.525 mum; Si; Si substrates; SiO₂-Si; as-deposited; channel guides; charge dose; coupling loss; electron beam irradiation; electron energy; electron-beam irradiation; electroplating; irradiation mask width; irradiation-induced changes; low propagation loss; near-infrared channel waveguides; optical insertion loss measurements; optimum propagation losses; plasma-enhanced chemical vapor deposition; silica layers; silicon substrates; spectral loss measurements; stability; surface mask; thermally annealed material,; Annealing; Electron beams; Loss measurement; Optical losses; Optical waveguides; Plasma chemistry; Plasma measurements; Propagation losses; Silicon compounds; Wavelength measurement;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.350623

Filename

350623